VS-HFA70EA120 www.vishay.com vishay semiconductors revision: 31-may-16 1 document number: 94747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 70 a features ? fast recovery time characteristic ? electrically isolated base plate ? antiparallel diodes ? large creepage distance between terminal ? simplified mechanical designs, rapid assembly ? designed and qualified for industrial level ? ul approved file e78996 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applications this sot-227 modules with hexfred ? rectifier are in antiparallel configuration. the antiparallel configuration is used for simple series rectifie r and high voltage application. ? the semiconductor in the sot-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. ? these modules are intended for general applications such as hv power supplies, electron ic welders, motor control and inverters. product summary v r 1200 v v f (typical) 2.2 v t rr (typical) 48 ns i f(dc) at t c , per module 70 a at 121 c package sot-227 sot-227 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 1200 v continuous forward current, per leg i f t c = 121 c 35 a single pulse forward current i fsm t j = 25 c 350 maximum power dissipation, per leg p d t c = 25 c 357 w t c = 100 c 143 rms isolation voltage v isol any terminal to case, t = 1 minute 2500 v operating junction and storage ? temperature range t j , t stg -55 to +150 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode ? breakdown voltage v br i r = 100 a 1200 - - v forward voltage, per leg v fm i f = 30 a - 2.2 3.0 i f = 60 a - 2.8 4.0 i f = 30 a, t j = 125 c - 2.13 - i f = 60 a, t j = 125 c - 2.70 - i f = 30 a, t j = 150 c - 2.04 - i f = 60 a, t j = 150 c - 2.65 - reverse leakage current, per leg i rm v r = v r rated - 2.0 75 a t j = 125 c, v r = v r rated - 1.6 5 ma t j = 150 c, v r = v r rated - 5 10
VS-HFA70EA120 www.vishay.com vishay semiconductors revision: 31-may-16 2 document number: 94747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time, per leg t rr i f = 1 a; di f /dt = 200 a/s; v r = 30 v - 48 - ns t j = 25 c i f = 50 a ? di f /dt = - 200 a/s ? v r = 200 v - 145 - t j = 125 c - 218 - peak recovery current, per leg i rrm t j = 25 c - 13 - a t j = 125 c - 19 - reverse recovery charge, per leg q rr t j = 25 c - 910 - nc t j = 125 c - 1920 - junction capaci tance, per leg c t v r = 1200 v - 27 - pf thermal - mechanical specifications parameter symbol test conditions min. typ. max. units junction to case, si ngle leg conducting r thjc - - 0.35 c/w junction to case, both legs conducting - - 0.175 case to heatsink r thcs flat, greased surface - 0.05 - weight -30 - g mounting torque torque to terminal - - 1.1 (9.7) nm (lbf.in) torque to heatsink - - 1.3 (11.5) nm (lbf.in) case style sot-227 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.5 1.5 2.5 3.5 5.0 1.0 2.0 3.0 4.0 4.5 1 1000 100 10 t j = 150 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 10 100 1000 10 000 0.01 0.1 1 200 0 400 600 800 1000 1200 t j = 125 c t j = 150 c t j = 25 c 10 10 100 100 1000 1000 10 000 c t - junction capacitance (pf) v r - reverse voltage (v)
VS-HFA70EA120 www.vishay.com vishay semiconductors revision: 31-may-16 3 document number: 94747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 5); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 p dm t 2 t 1 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c dc allowable case temperature (c) i f(av) - average forward current (a) 60 40 20 80 100 120 0 0 50 75 25 100 150 175 125 square wave (d = 0.50) 80 % rated v r applied dc average power loss (w) i f(av) - average forward current (a) 80 60 40 20 0 200 0 100 150 50 dc rms limit d = 0.20 d = 0.75 d = 0.50 d = 0.33 d = 0.25 t rr (ns) di f /dt (a/s) 100 1000 50 300 250 100 150 200 i f = 50 a v r = 200 v t j = 25 c t j = 125 c q rr (nc) di f /dt (a/s) 100 1000 0 3000 2500 1000 1500 2000 500 i f = 50 a v r = 200 v t j = 25 c t j = 125 c
VS-HFA70EA120 www.vishay.com vishay semiconductors revision: 31-may-16 4 document number: 94747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - typical peak recovery current vs. di f /dt fig. 10 - reverse recovery parameter test circuit fig. 11 - reverse recovery waveform and definitions i rr (a) di f /dt (a/s) 100 1000 0 40 20 30 10 i f = 50 a v r = 200 v t j = 25 c t j = 125 c irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA70EA120 www.vishay.com vishay semiconductors revision: 31-may-16 5 document number: 94747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration circuit circuit configuration code circuit drawing 2 separate diodes, ? antiparallel pin-out e links to related documents dimensions www.vishay.com/doc?95423 part marking information www.vishay.com/doc?95425 1 2 3 4 5 6 7 device code 5 1 3 2 4 6 7 hf vs- a 70 e a 120 - hexfred ? family - vishay semiconductors product - process designator (a = electron irradiated) - average current (70 = 70 a) - circuit configuration (2 separate diodes, antiparallel pin-out) - package indicator (sot-227 standard insulated base) - voltage rating (120 = 1200 v) 1 43 2 lead a ss ignment 4 12 3
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